METHOD OF MANUFACTURING FERROELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT HILLOCK

摘要

PURPOSE: A method of manufacturing a ferroelectric capacitor of a semiconductor device is provided to improve the qualities of a metal thin film for a lower electrode by removing previously the hillock or node capable of being generated due to the difference of coefficients of thermal expansion between the thin metal film and another thin film. CONSTITUTION: A metal thin film(2) for a lower electrode is formed on a substrate(1). A sacrificial ferroelectric thin film(3a) is formed on the metal thin film. The sacrificial ferroelectric thin film is used for promoting deformed by-products to be generated from a surface of the metal thin film. The deformed by-products are actually generated from the surface of the metal thin film by using a heat treatment. The sacrificial ferroelectric thin film is removed therefrom. The deformed by-products are then removed therefrom by performing an etch-back process on the metal thin film as much as a predetermined thickness. A ferroelectric thin film and an upper electrode are sequentially formed thereon.