METHOD OF FORMING A NICKEL SILICIDE REGION IN A DOPED SILICON-CONTAINING SEMICONDUCTOR AREA

摘要

In highly sophisticated MOS transistors including nickel silicide portions (311) for reducing the silicon sheet resistance, nickel silicide stingers may lead to short circuits between the drain and source region and the channel region, thereby significantly lowering production yield. By substantially amorphizing corresponding portions (331) of the source and drain regions, the creation of clustered point defects may effectively be avoided during curing implantation induced damage, wherein a main diffusion path for nickel during the nickel silicide formation is interrupted. Thus, nickel silicide stingers may be significantly reduced or even completely avoided.