发明名称 |
Method of forming planar Cu interconnects without chemical mechanical polishing |
摘要 |
A method for controlling the shape of copper features, having the following steps: a) plating a copper feature with a predetermined final shape onto a copper seed layer in a plating bath for a first plating time using a first plating method, wherein the first plating time is less than the total length of time necessary to plate the substantially all of the final shape; and b) electrically treating the plated copper feature in a copper plating bath for a second period of time, the second period of time sufficient to at least form the predetermined final shape.
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申请公布号 |
US2004094511(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20020300468 |
申请日期 |
2002.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SEO SOON-CHEON;TSENG WEI-TSU;RESTAINO DARRYL D.;FLUEGEL JAMES E.;HENRY RICHARD O.;COTTE JOHN M.;KRISHNAN MAHADEVAIYER;DELIGIANNI HARIKLIA;VEREECKEN PHILIPPE MARK;GRECO STEPHEN E. |
分类号 |
C25D5/18;C25D7/12;H01L21/288;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
C25D5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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