发明名称 Method of forming planar Cu interconnects without chemical mechanical polishing
摘要 A method for controlling the shape of copper features, having the following steps: a) plating a copper feature with a predetermined final shape onto a copper seed layer in a plating bath for a first plating time using a first plating method, wherein the first plating time is less than the total length of time necessary to plate the substantially all of the final shape; and b) electrically treating the plated copper feature in a copper plating bath for a second period of time, the second period of time sufficient to at least form the predetermined final shape.
申请公布号 US2004094511(A1) 申请公布日期 2004.05.20
申请号 US20020300468 申请日期 2002.11.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 SEO SOON-CHEON;TSENG WEI-TSU;RESTAINO DARRYL D.;FLUEGEL JAMES E.;HENRY RICHARD O.;COTTE JOHN M.;KRISHNAN MAHADEVAIYER;DELIGIANNI HARIKLIA;VEREECKEN PHILIPPE MARK;GRECO STEPHEN E.
分类号 C25D5/18;C25D7/12;H01L21/288;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 主分类号 C25D5/18
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