| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device suitable for emission of light in the infrared domain which a photodiode using silicon senses with high sensitivity and capable of cutoff frequency improvement without reduction in radiant power output. <P>SOLUTION: The primary surface of the supporting substrate comprising a group III-V compound semiconductor is the (100) plane or a surface tilted from the (100) plane by 2° or less. On the primary surface of the supporting substrate, a light-emitting lamination structure is formed. The light-emitting lamination structure includes a quantum well layer of an In-containing group III-V mixed-crystal semiconductor, a pair of carrier confinement layers sandwiching the quantum well layer and having a band gap wider than that of the quantum well layer, and a pair of clad layers sandwiching the three layers and having a band gap wider than that of the carrier confinement layers. The materials for the quantum well layer and for the carrier confinement layers and the thickness of the quantum well layer are selected so that the difference between the energy level at the carrier confinement layer conduction band lower edge and the ground level of electrons in the quantum well layer is 100 meV or higher. <P>COPYRIGHT: (C)2004,JPO |
