| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser where the variation of a band gap of an active layer in an inner region of a resonator is suppressed while a COD is prevented. SOLUTION: An n-type current inhibition layer 1201 is formed so that a p-type ridge stripe 1700 formed of parts obtained by working p-type AlGaAs clad layer 1106 and a p-type GaAs cap layer 1107 in stripe shapes is sandwiched with both sides. An opening part 1107h obtained by partially removing a near region of a resonator end face in the thickness direction is formed in the p-type cap layer 1107 constituting an upper part of the ridge stripe 1700. A quantum well active layer 1104 is provided with a disordered region 1104b formed by an annealing processing in a state where a dielectric film 1601 is formed only in the opening part 1107h. COPYRIGHT: (C)2004,JPO
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