发明名称 CRUCIBLE CAPPING AND SINGLE-CRYSTAL GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a crucible capping wherein when a compound semiconductor single crystal is grown by a vertical boat method, the solidified crystal is easily separated from the crucible, and the crucible itself can be reutilized. SOLUTION: In one embodiment, the crucible capping is a crucible capping fitted to the lower part of a crucible in order to grow a single crystal by using a liquid sealing agent by a vertical boat method and has a shape suitable for easy break after the growth of the single crystal. In another embodiment, the crucible capping is a crucible capping fitted to the lower part of a crucible in order to grow a single crystal by using a liquid sealing agent by a vertical boat method and has such a shape that a seed crystal does not reach the lowermost part of the inside of the crucible capping. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004142992(A) 申请公布日期 2004.05.20
申请号 JP20020309617 申请日期 2002.10.24
申请人 SHOWA DENKO KK 发明人 YAKUSHIJI KENJI
分类号 C30B15/10;(IPC1-7):C30B15/10 主分类号 C30B15/10
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