| 摘要 |
A laminated film including a thermal oxide film, a polysilicon film and a silicon nitride film is formed on a silicon substrate, and the laminated film is patterned by using a resist pattern as a mask. An element-isolating trench is formed in the silicon substrate by using a patterned laminated film as a mask, and a silicon oxide film is buried in the element-isolating trench. After removing the silicon nitride film, unnecessary portions of the silicon oxide film are removed by CMP by using the polysilicon film as a stopper film. Then, the polysilicon film and the thermal oxide film are removed.
|
