| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a semiconductor element where dicing line width is reduced while ground inductance is suppressed and a wasteful region can be reduced on a wafer, and to provide a manufacturing method. <P>SOLUTION: In the semiconductor element (200) provided with an upper face, sides and a backside, the sides have a vertical side face (220) which is formed almost vertically to the upper face and slant sides (210) projected toward the backside from the upper face in a forward taper shape, and wiring layers (240) to the backside from the upper face through the slant sides are disposed. Thus, the semiconductor element which can inexpensively be manufactured by increasing chip yield per wafer while ground inductance is suppressed with such constitution, the semiconductor device using the semiconductor element and the manufacturing method of them can be supplied. Consequently, a large industrial merit can be obtained. <P>COPYRIGHT: (C)2004,JPO |
