| 摘要 |
FIELD: semiconductor electronics. SUBSTANCE: proposed transistor structure distinguished by high resistance to changes in heat balance within its active areas due to deviation of amplification conditions from standard values such as mismatch between final stage of power amplifier and load depends for its operation on power redistribution among its active areas in case of heat unbalance by changing proportion between resistance of separate sections of ballast resistor. Ballast resistor of high-power transistor structure has fragments whose temperature coefficient of resistance is other than that of resistor. Fragments are distributed so that value of ballast resistor section connected in series with transistor structure grows at relative overheating of any active area of the latter to a greater extent than relative changes in values of resistor sections connected to transistor structure areas heated to lower temperature. EFFECT: enhanced reliability of transistor structure. 1 cl, 2 dwg |
