| 摘要 |
FIELD: microelectronics, plasma technology for manufacturing microelectronic items. SUBSTANCE: proposed method used for manufacturing microelectronic devices in the course of evaporating metal on structures incorporating submicron-sized components involves following procedures. During starting of microwave exponential discharge in vacuum chamber holding inert gases ions of these gases knock metal atoms out of metal target. Negative voltage of several hundreds of volts is applied to target to speed up motion of ions. Concentration of electrons is increased by means of set of permanent magnets designed to build up magnetic field of acute-angled (simple cusp) configuration. Degree of ionization of evaporated metal atoms and flow of metal ions evaporated onto substrate are controlled by pulse mode of current density on target. Enhanced degree of metal atom ionization ensures uniform thickness of metal films produced on inner surfaces of submicronsized embossed structures with depth-to-width ratio of 5 10. EFFECT: improved quality of evaporated metal films. 1 cl, 5 dwg |
