| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a large area crystal thin film semiconductor device like a solar battery which can attain conversion efficiency exceeding 10% with high efficiency at a low cost. <P>SOLUTION: In equipment wherein a semiconductor thin film 04 formed on a substrate 01 is fused/crystallized or re-crystallized by continuous wave light and a crystal semiconductor thin film 04a is formed, a light source becoming a heating source of re-crystallization is constituted of a plurality of laser light sources. Further, a plurality of laser light sources which have strip-shaped exposure areas 20 are so arranged to a longitudinal direction of strips that the exposure areas may not break off, beam or the substrate is scanned in a right angle direction of the light sources, and batch processing of large area is performed. Exposure to light from the laser light sources is applied long enough also to a part corresponding to an end of a side surface, and reflow is performed. Crystals whose particle size is large can be formed at ends of both side surfaces, so that processing wherein large-sized crystals are formed over the whole region of large area is simply enabled in a short time. <P>COPYRIGHT: (C)2004,JPO</p> |
