METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which generation of grooving or void can be suppressed on the surface of interconnect lines. SOLUTION: A first film of an insulating material is formed on a substrate. A recess is made in the first film. A conductive film of metal is deposited on the first film to bury the recess. The conductive film is polished to leave a part thereof in the recess. Processing liquid containing an organic compound is touched to the surface of the conductive film left in the recess and a coating film is formed on the surface of the conductive film. COPYRIGHT: (C)2004,JPO