发明名称 Magnetron sputtering apparatus and magnetron sputtering method using the same
摘要 A magnetron sputtering apparatus and a magnetron sputtering method using the same, wherein a vacuum chamber has a discharge gas inlet and a discharge gas outlet, a substrate holder is installed inside the vacuum chamber, a magnetic circuit unit, which includes a target electrode installed opposite to the substrate and a magnetron fixed on a rear surface of the target electrode, faces the substrate holder and circulates around the central axis of the substrate holder, and a driving unit circulates the magnetic circuit unit and adjusts a distance between the target electrode and the center of the substrate holder. Accordingly, in the magnetron sputtering apparatus of the present invention, the uniformity of a thin film and the step coverage is improved.
申请公布号 US2004094412(A1) 申请公布日期 2004.05.20
申请号 US20020306741 申请日期 2002.11.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAVALA SERGIY YAKOVLEVICH;MA DONG-JOON;KIM TAE-WAN
分类号 H01L21/203;C23C14/35;H01J37/34;H01L21/285;(IPC1-7):C23C14/35 主分类号 H01L21/203
代理机构 代理人
主权项
地址