Semiconductor integrated circuit device and production method thereof

摘要

A CVD device (100) used for depositing a silicon nitride has a structure in which a hot wall furnace (103) for thermally degrading a source gas and a chamber (101) for forming a film over a surface of a wafer (1) are separated from each other. The hot wall furnace (103) for thermally degrading the source gas is provided above the chamber (101), and a heater (104) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace (103) through pipes (105) and (106), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage (102) of the chamber (101) to form a film on the surface of the wafer (1).