发明名称 SOLID STATE IMAGE DEVICE WITH ACCELERATED OPERATION, AND MANUFACTURING METHOD THEREFOR
摘要 PURPOSE: A solid state image device and a manufacturing method therefor are provided to accelerate an operation speed of the device by transmitting signals without degrading waveforms. CONSTITUTION: A solid state image device includes a conductive pattern(122) formed on a substrate, an insulating film(120), and a metallic pattern. The insulating film is implemented on the substrate to cover the conductive pattern. The metallic pattern is formed on the insulating film and contacts the conductive pattern through a contact window(120A) formed on a corresponding insulating film. The metallic pattern of the contact window includes at least one of a silicon, a metal oxide, and a silicon and metal nitride. The metal pattern is implemented on the substrate as a branch interconnection provided to apply a voltage on the conductive pattern. The substrate is made using silicon.
申请公布号 KR20040042885(A) 申请公布日期 2004.05.20
申请号 KR20030080423 申请日期 2003.11.14
申请人 SONY CORPORATION 发明人 MARUYAMA YASUSHI
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L27/12;H01L27/14;H01L27/146;H01L27/148;(IPC1-7):H01L27/148 主分类号 H01L21/3205
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