摘要 |
PURPOSE: A solid state image device and a manufacturing method therefor are provided to accelerate an operation speed of the device by transmitting signals without degrading waveforms. CONSTITUTION: A solid state image device includes a conductive pattern(122) formed on a substrate, an insulating film(120), and a metallic pattern. The insulating film is implemented on the substrate to cover the conductive pattern. The metallic pattern is formed on the insulating film and contacts the conductive pattern through a contact window(120A) formed on a corresponding insulating film. The metallic pattern of the contact window includes at least one of a silicon, a metal oxide, and a silicon and metal nitride. The metal pattern is implemented on the substrate as a branch interconnection provided to apply a voltage on the conductive pattern. The substrate is made using silicon.
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