| 摘要 |
FIELD: production of inorganic fluorides; electrochemical method of production of nitrogen trifluoride. SUBSTANCE: nitrogen trifluoride is used as fluorine carrier in pickling silicon crystals in production of microprocessors and as oxidant in high- energy lasers. Nitrogen trifluoride is produced by electrochemical fluorination of hydrofluoric melts of ammonium fluoride in electrolyzer with the use of nickel anodes at making-up starting agents in electrolyzer by hydrofluoric melts of ammonium fluoride at moisture content not exceeding 0.05%. Prior to starting electrolysis process, electrolyzer is kept at voltage of 2.8 to 3.0 V during 10-15 h and this voltage is maintained during intervals in process both in molten and solidified electrolyte. Proposed method ensures formation of dense electroconducting protective film on nickel anode where electrochemical synthesis of nitrogen trifluoride is most selective. EFFECT: reduced power requirements; avoidance of break of protective film during intervals in electrolysis process. 3 cl, 1 dwg, 3 ex |
