| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor circuit device in which address signals can be switched at a high rate. <P>SOLUTION: Regions (PA0, PA1, NA0, NA1) for specifying transistors receiving address signals (A0P, A0N, A1P, A1N) at the gate thereof are arranged in regions corresponding to the underlying layer of address interconnect lines (10a, 10b) for transmitting corresponding address signals, and the gate electrodes of transistors corresponding to respective address signals are connected using intermediate interconnect lines (14a, 14b) extending only in the corresponding address interconnect line arranging regions. In a semiconductor device where the number of circuits is selected according to a plurality of signals, the transistor is arranged in a region corresponding to the underlying layer of an interconnect line for transmitting a corresponding signal and since the distance of a signal take-out line between the control electrode and the signal line of the transistor can be shortened, the load on the signal line can be reduced correspondingly and signals can be switched at a high rate. <P>COPYRIGHT: (C)2004,JPO |
