| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in reliability by improving the inter-wiring adhesion and electrical conductivity in a pad section. <P>SOLUTION: In this semiconductor device, Cu damascene wiring 6 and its pad section 6a are provided from the upper surface to the inside of an SiO<SB>2</SB>film 2 formed on an Si substrate 1. In addition, Al dual damascene wiring 12a is provided above the pad section 6a of the Cu damascene wiring 6 while the wiring 12a is exposed from the upper surface of an SiO<SB>2</SB>film 8 formed on the SiO<SB>2</SB>film 2 and the Cu damascene wiring 6. Moreover, contact plugs 12b are provided from the low surface of the dual damascene wiring 12a to the inside of the pad section 6a of the Cu damascene wiring 6. <P>COPYRIGHT: (C)2004,JPO |
