| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can acquire resistivity to ESD even if an input bump is allocated in the place far from an input/output circuit near to the external circumference of a semiconductor chip. <P>SOLUTION: The semiconductor device comprises the input/output circuit 13 formed in the place near to the external circumference of the semiconductor chip 11, a function module 14 formed in the center side of the input/output circuit 13 of the semiconductor chip 11, an electrostatic discharge protection circuit 15 which is formed within the function module 14 of the semiconductor chip 11 to protect the circuit in the subsequent stage from breakdown due to the electrostatic discharge, and a bump 12A which is allocated on one main surface of the semiconductor chip 11 near the function module 14 and is connected to the function module 14 via the electrostatic discharge protection circuit 15. <P>COPYRIGHT: (C)2004,JPO |
