发明名称 TEST METHOD OF SEMICONDUCTOR STORAGE CIRCUIT, AND READOUT CIRCUIT OF SEMICONDUCTOR STORAGE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce the time required for a test by specifying a defect part generated in a memory part of a semiconductor storage circuit. SOLUTION: In a semiconductor device provided with the semiconductor storage circuit whose operation is tested by combining an external testing means, the semiconductor device is provided with a test pattern generator generating a test pattern showing the kind of the test in response to instruction from the testing means and an expected value expected to be obtained from the test pattern and a plurality of memory cells disposed in a matrix shape of rows and columns and respectively memorizing data and the semiconductor storage circuit operating based on the test pattern and outputting data in the respective memory cells in every row, a judgement part comparing the outputted data with the expected value and outputting the compared result and a transducing part transducing the compared result into address data and outputting the data to the external testing means. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004146053(A) 申请公布日期 2004.05.20
申请号 JP20030374085 申请日期 2003.11.04
申请人 OKI ELECTRIC IND CO LTD 发明人 TANABE TETSUYA;TANOI SATOSHI;TOKUNAGA YASUHIRO
分类号 G01R31/28;G11C29/00;G11C29/12;(IPC1-7):G11C29/00 主分类号 G01R31/28
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