| 摘要 |
A photoconductive material imaging element is described comprising a support and a silver halide emulsion imaging layer comprising silver halide grains which have not been chemically sensitized to optimize formation of latent image Agn<0 >centers upon imagewise exposure and which are doped with at least 500 deep electron trapping agent dopant centers per grain. In accordance with a preferred embodiment, the photoconductive material imaging element includes a planar support and the non-chemically sensitized, deep electron trapping agent doped silver halide grains comprise tabular grains, preferably with an average grain size equivalent circular diameter of greater than 2 mum, with the long dimensions of the tabular grains primarily oriented parallel to the plane of the support.
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