METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of securing capacitance enough according to high integration and improving electrical characteristics. CONSTITUTION: A lower storage node(15) is formed on a semiconductor substrate(10). A dielectric layer(16) is formed along the upper surface of the resultant structure. At this time, the dielectric layer is made of a native oxide layer(16a), a nitride layer(16b), and a high permittivity oxide layer(16c). A heat treatment is carried out on the high permittivity oxide layer. An upper storage node(17) is formed on the dielectric layer. Preferably, the native oxide layer is formed by carrying out a pre-cleaning process on the lower storage node using SC-1.