METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to restrain the damage of a dielectric layer due to a heat treatment for preventing the increase of leakage current by using a deterioration preventing layer. CONSTITUTION: A mold insulating layer is formed on a substrate having a contact plug. A storage node hole is formed on the mold insulating layer for exposing the contact plug. A capacitor lower electrode layer is formed on the resultant structure. A deterioration preventing layer is formed on the lower electrode layer. A storage node separation process is performed by partially removing the deterioration preventing layer and the lower electrode layer. Then, the deterioration preventing layer is selectively removed from the storage node hole for remaining only at the bottom portion of the storage node hole. A dielectric layer is deposited on the resultant structure. A capacitor upper electrode is formed on the dielectric layer.