发明名称 ELECTRODE FOR PLASMA CHEMICAL VAPOR DEPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To easily form a uniform film on a three-dimensional surface such as a cylindrical surface of a workpiece by a plasma CVD method and to etch the three-dimensional surface by ion bombardment to clean it. <P>SOLUTION: The electrode for plasma CVD is constructed by arranging anodes 2 and cathodes 3, each in a form of a ring (or a doughnut), alternately in the central axis direction so that the central axes of these electrodes coincide with each other and a workpiece 9 is placed along the central axis. Between the anodes 2 and the cathodes 3, ring-shaped floating electrodes 4 neutral to the voltage applied to electrodes 2, 3 are arranged. A workpiece connection electrode 7 for conducting electricity to the workpiece 9 is placed, and a switch 6 for switching the negative side of a power supply 5 from the cathodes 3 to the connection electrode 7 and vice versa is provided. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004143542(A) 申请公布日期 2004.05.20
申请号 JP20020310478 申请日期 2002.10.25
申请人 SHINKU DEVICE:KK 发明人 AKAHORI HIROSHI;YOSHIDA TOSHIHARU
分类号 H05H1/24;B01J19/08;C23C16/503 主分类号 H05H1/24
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