| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which embedded wiring is formed without causing defective connections in connection holes even when the holes have high aspect ratios, and also to provide a method of manufacturing the device. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming the connection holes 2a in an insulating film 2; forming fine recessed and projecting sections on the surface of the film 2 and internal surfaces of the holes 2a by ion-implanting heavy atoms into the surface of the film 2 and the holes 2a; and forming a palladium layer on the formed fine recessed and projecting sections by dipping the insulating film 2 into a pre-treating liquid for electroless plating. The method also includes steps of: forming a Cu layer 3 on the palladium layer by electroless plating the palladium layer with copper by dipping the insulating film 2 in an electroless plating tank; and forming embedded Cu layers 3a in the connection holes 2a by removing the Cu layer 3 existing on the insulating film 2 by CMP. COPYRIGHT: (C)2004,JPO
|
