| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which prevents an interface from developing dry areas when oxidizing a silicon substrate having an off angle. SOLUTION: In forming an oxide film 2 and a nitride film 1 which are deposited in layers on top of the silicon substrate having the off angle, as a mask for forming element isolation, radical oxygen is used for growing the oxide film 2. When implanting ions into the silicon substrate having the off angle, radical oxygen is used in growing a sacrifice oxide film 5. Gate oxidation is carried out using radical oxygen when forming a gate insulation film 7 on the silicon substrate having the off angle. COPYRIGHT: (C)2004,JPO
|
