发明名称 MATERIAL FOR METAL OXIDE FILM FORMATION AND METAL OXIDE FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress cracks generated at metal oxide film and the peeling-off of the metal oxide film from a substrate by these cracks. SOLUTION: This material for the metal oxide film formation is employed in a method to form the metal oxide film by coating thermal decomposition, and contains the saturated normal chain fatty acid salt of a metal constituting the metal oxide film, a crystallization inhibitor selected from normal chain or branched fatty acid having a substituent group and their salt, and an organic solvent. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004146202(A) 申请公布日期 2004.05.20
申请号 JP20020309935 申请日期 2002.10.24
申请人 FUJITSU LTD 发明人 NAKAZAWA AKIRA
分类号 H01J11/12;H01J11/22;H01J11/24;H01J11/26;H01J11/34;H01J11/38;H01J11/40;(IPC1-7):H01J11/02 主分类号 H01J11/12
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