SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING DEGRADATION OF CAPACITIVE DIELECTRIC LAYER, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent degradation of a capacitive dielectric layer constituting a capacitor, caused by hydrogen by increasing the thickness of a covering on a sidewall of an upper hydrogen-barrier layer. CONSTITUTION: A semiconductor device includes a hydrogen-barrier film(19), a capacitor(27) formed on the lower hydrogen-barrier film, a first interlayer dielectric(15), and an upper hydrogen-barrier film(29). The insulating dielectric encapsulates the capacitor and is formed to expose the lower hydrogen-barrier film around the capacitor. The upper hydrogen-barrier film is formed on an exposed portion of the first interlayer dielectric and the lower hydrogen-barrier film. The upper hydrogen-barrier film is in contact with the lower hydrogen-barrier film around the capacitor. A side cross-section encapsulating a side portion of the capacitor on the first interlayer dielectric forms an obtuse angle with the lower hydrogen-barrier film.