METHOD FOR FORMING THIN FILM OF SEMICONDUCTOR DEVICE USING ATOMIC LAYER DEPOSITION(ALD)

摘要

PURPOSE: A method for forming a thin film of a semiconductor device using an ALD(Atomic Layer Deposition) is provided to be capable of uniformly distributing -OH radicals on a substrate for restraining pin holes from being generated in the thin film. CONSTITUTION: A substrate(200) is prepared for forming a thin film. The -OH radicals adsorbed on the substrate are uniformly distributed by carrying out an H2O plasma treatment. Deposition source material is supplied to the substrate. H2O vapor is supplied to the substrate as a reaction gas. Preferably, the H2O plasma treatment is carried out by using the power of 50-500 Watt. Preferably, the H2O plasma treatment is carried out in the range of room temperature to 250 °C. Preferably, the H2O plasma treatment is carried out for 30-300 second.