发明名称 Substrate independent distributed bragg reflector and formation method
摘要 Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.
申请公布号 US2004096574(A1) 申请公布日期 2004.05.20
申请号 US20030462407 申请日期 2003.06.16
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS. 发明人 HSIEH KUANG-CHIEN;CHENG KEH-YUNG
分类号 H01S5/125;(IPC1-7):B05D5/12 主分类号 H01S5/125
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