发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
Disclosed is a method of manufacturing a semiconductor device. A gate electrode, which was formed through existing mask and etch processes, is formed by forming an oxide film protrusion on a field oxide film and forming the gate electrode between the oxide film protrusions. It is thus possible to minimize the critical dimension of the device, easily adjust the size of the device and form a uniform gate electrode over the wafer.
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申请公布号 |
US2004097080(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20030623341 |
申请日期 |
2003.07.18 |
申请人 |
KIM JUM SOO;AHN JUNG RYUL |
发明人 |
KIM JUM SOO;AHN JUNG RYUL |
分类号 |
H01B11/00;H01L21/28;H01L21/302;H01L21/461;H01L21/8247;(IPC1-7):H01L21/302 |
主分类号 |
H01B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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