| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light-emitting element that uses a high-stability material and realizes high-efficiency visible light emission. <P>SOLUTION: At least an n-type ZnO-based semiconductor clad layer 2, a ZnO-based semiconductor active layer 3, and a p-type ZnO-based semiconductor clad layer 4 are successively deposited on a substrate 1. The ZnO-based semiconductor active layer 3 is a quantum well structure having a well layer and a barrier layer. The well layer is made of Zn, O, and another group VI element S, and is doped with B, Al, or Ga which is an n-type impurity element smaller than Zn in terms of ionic radius. Crystals of ZnO and ZnS when mixed reduce the band gap energy for enabling emission at wavelengths not shorter than 400 nm. Since the n-type impurity element is smaller than Zn in terms of ionic radius, grid distortion attributable to the difference in bond lengths between elements in groups II-VI is eased for improvement in crystallinity. <P>COPYRIGHT: (C)2004,JPO |
