| 摘要 |
PROBLEM TO BE SOLVED: To provide a solution to the problem that the transmittance of an fθlens used as a laser condensing means is different at its center and edge, thus causing a difference in energy of a laser beam irradiating a semiconductor film when used for laser crystallization on an as-is basis, and making it impossible to uniformly irradiate the entire semiconductor film. SOLUTION: An apparatus for laser irradiation using a galvanomirror, and an fθlens optical system can offset an energy change caused by a change in fθlens's transmittance, and can do laser scanning while controlling changes of energy given to an irradiated object. Further, a semiconductor device manufacturing method using the apparatus is provided. COPYRIGHT: (C)2004,JPO
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