| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring a charge carrier lifetime, usable to a semiconductor wafer used for products by realizing a non-destructive measurement, and its measurement apparatus. SOLUTION: A conductive measuring probe(6) and the surface of the semiconductor wafer(10) are contacted with each other to form a capacitor. A direct voltage having an alternating voltage superimposed thereon is applied between the measuring probe and the semiconductor wafer, and is varied between a first voltage and a second voltage. A light pulse (36) is irradiated to a location near a contact point of the measuring probe with the semiconductor wafer. The change in the capacitance of the capacitor over time is measured after the termination of the pulse. The charge carrier lifetime of the semiconductor wafer is measured on the basis of the measured capacitance. COPYRIGHT: (C)2004,JPO
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