| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the formation of the reversely tapered side face of Al-alloy wiring is suppressed by suppressing the occurrence of an ion shading phenomenon at the time of performing etching for forming the Al-alloy wiring on a base having steps, and also to provide a method of manufacturing the device. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming a Ti layer on an interlayer insulating film 11 serving as the base having steps; forming an Al layer or Al-alloy layer on the Ti layer; and forming an Al<SB>3</SB>Ti layer 5a by bringing the Ti layer and Al or Al-alloy layer into alloying reaction through heat treatment. The method also includes steps of: forming a resist pattern 12 on the Al<SB>3</SB>Ti layer 5a; and forming the Al-alloy wiring 13 on the insulating film 11 by etching the Al<SB>3</SB>Ti layer 5a by using the resist pattern 12 as a mask. COPYRIGHT: (C)2004,JPO
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