| 发明名称 |
SILICON OXIDE BASED GATE DIELECTRIC LAYER |
| 摘要 |
A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide, SiOX<=2, having a dielectric constant greater than about 3.9 and less than or equal to about 12.
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| 申请公布号 |
US2004097026(A1) |
申请公布日期 |
2004.05.20 |
| 申请号 |
US20030696854 |
申请日期 |
2003.10.30 |
| 申请人 |
MULLER DAVID A.;TIMP GREGORY L. |
发明人 |
MULLER DAVID A.;TIMP GREGORY L. |
| 分类号 |
H01L29/78;H01L21/02;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):B32B9/00;H01L21/336;B32B1/00;H01L21/823;H01L21/476;H01L21/320;B32B15/04;B32B13/04;B32B9/04 |
主分类号 |
H01L29/78 |
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