发明名称 |
Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer |
摘要 |
A semiconductor device 100 includes a low-k dielectric insulator 104. In the preferred embodiment, a low-k dielectric material 104 is deposited. This material 104 is then cured using a plasma cure step. The cure process causes the density of the top portion 106 of layer 104 to be increased. The higher density portion 106, however, also has a higher dielectric constant. As a result, the dielectric constant of the layer 104 can be reduced by removing this higher density portion 106. This leads to a lower dielectric constant (e.g., less than about 3) of the bulk film.
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申请公布号 |
US2004097099(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20020295609 |
申请日期 |
2002.11.15 |
申请人 |
LI LIH-PING;LU HSIN-HSIEN;JANG SYUN-MING |
发明人 |
LI LIH-PING;LU HSIN-HSIEN;JANG SYUN-MING |
分类号 |
H01L21/768;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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