发明名称 RESET SIGNAL GENERATION CIRCUIT AND NONVOLATILE FERROELECTRIC MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A reset signal generation circuit and a nonvolatile ferroelectric memory device using the same are provided to generate a reset signal stably only when a power supply voltage has a level above a constant level without regard to a power-on slope of the power supply voltage. CONSTITUTION: A power sensor part maintains an amplitude of an applied voltage for a constant time. A threshold voltage control part(22) supplies a current to a feedback control part according to the variation of a power supply voltage and a bias voltage. The feedback control part(23) transits an output voltage of the power sensor part to a low level only when the power supply voltage reached a constant level according to the output voltage of the power sensor part and the current supplied from the threshold voltage control part. A pull-up control part(24) pulls up the output voltage of the power sensor part to a high level, and outputs a voltage signal controlled by the feedback control part as a reset signal. And a self bias part(25) controls the current supplied to the feedback control part from the threshold voltage control part until the power supply voltage reached the constant level.
申请公布号 KR20040042343(A) 申请公布日期 2004.05.20
申请号 KR20020070602 申请日期 2002.11.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, HUI BOK
分类号 G06F1/26;G06F1/24;G11C11/22;H03K3/356;H03K17/22;(IPC1-7):G11C7/00 主分类号 G06F1/26
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