| 摘要 |
PURPOSE: An apparatus and method for forming an oxide layer of a silicon wafer is provided to be capable of reducing the size of the apparatus, reducing the cost for forming the oxide layer, and uniformly and thinly forming the oxide layer. CONSTITUTION: An apparatus for forming an oxide layer of a silicon wafer is provided with a transparent case(110) and an ultraviolet ray generating part(120) installed at the outer portion of the transparent case for uniformly irradiating ultraviolet rays to the oxygen gas in the transparent case. At this time, the transparent case includes an oxygen gas inlet port(111) and an oxygen gas exhaust port(112). The transparent case is made of predetermined material capable of transmitting ultraviolet rays. The apparatus further includes an oxygen gas flowing part(130) connected to the oxygen gas inlet port through an oxygen gas inlet pipe(131).
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