| 摘要 |
PURPOSE: A method of forming a repair redundancy fuse of a semiconductor device is provided to prevent the semiconductor device from being damaged due to the laser generated under a repair process by depositing a second polysilicon layer on a first polysilicon layer via an insulating layer. CONSTITUTION: A field oxide(20), a first polysilicon layer(30) and an insulating layer(40) are sequentially formed on a semiconductor substrate(10). A photoresist pattern is formed thereon. A contact hole for exposing the first polysilicon layer is formed by etching selectively the insulating layer using the photoresist pattern as an etching mask. The photoresist pattern is removed therefrom. A second polysilicon layer(70) is connected with the first polysilicon layer through the contact hole of the insulating layer. The insulating layer is a BPSG(BoroPhosphoSilicate Glass) layer.
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