| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure by which the luminance of a semiconductor light emitting device formed by sticking a laminated semiconductor section having a light emitting layer forming section composed of a compound semiconductor to the surface of a conductive substrate through a metal layer can be improved further. <P>SOLUTION: The semiconductor light emitting device is formed by bonding the laminated semiconductor section 10 having the light emitting layer forming section 3 to the conductive substrate 1 through the metal layer 2. The metal layer 2 has at least a first metal layer 21 which is brought into ohmic contact with the laminated semiconductor section 10, a second metal layer 22 composed of Ag, and a third metal layer 23 composed of a metal that can be bonded to the substrate 1 at low temperatures. <P>COPYRIGHT: (C)2004,JPO |
