| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric converter which improves the open-circuit voltage and improves the photoelectric conversion efficiency by suppressing the loss in a junction interface between a p-type layer and an i-type layer, and to provide a method for manufacturing the same. <P>SOLUTION: The photoelectric converter 10 contains a silicon and a carbon as the main components on a transparent conductive film 2 formed on a transparent substrate 1. Further, the converter 10 includes a first p-type layer 3 containing a boron, a thick second p-type layer 4 containing silicon as the main component and containing a boron, and an i-type layer 5 containing silicon as the main component and having substantially intrinsic semiconductor characteristics. The converter 10 also includes a first photoelectric conversion layer 7 sequentially brought into contact with an n-type layer 6 containing phosphorus, and a conductive thin film 8 formed on the layer 7. A band gap can be increased with the first p-type layer containing silicon and carbon as the main components and further containing boron, and the open-circuit voltage of the converter can be raised. <P>COPYRIGHT: (C)2004,JPO</p> |
