| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element capable of inverting the magnetization of a free layer with a weak magnetic field and to provide a magnetic memory and magnetic head using the magnetoresistance effect element. SOLUTION: This magnetoresistance effect element 1 is provided with a free layer 11 having a pair of opposite ferromagnetic layers 11a whose magnetizing directions are equal and a non-magnetic film 11b interposed between those ferromagnetic layers 11a wherein the directions of the magnetization are changeable when a magnetic field is applied, a pin layer 12 having a ferromagnetic layer faced to the free layer 11 wherein the direction of magnetization is maintained when a magnetic field is applied and a non-magnetic layer 13 interposed between the free layer 11 and the pin layer 12. The materials of the non-magnetic film 11b are selected from the group consisting of titanium, vanadium, zirconium, niobium, molybdenum, technetium, hafnium, tungsten, rhenium and their alloys. COPYRIGHT: (C)2004,JPO
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