发明名称 Non-thermal process for forming porous low dielectric constant films
摘要 Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
申请公布号 US2004096593(A1) 申请公布日期 2004.05.20
申请号 US20030624356 申请日期 2003.07.21
申请人 LUKAS AARON SCOTT;O'NEILL MARK LEONARD;BITNER MARK DANIEL;VINCENT JEAN LOUISE;VRTIS RAYMOND NICHOLAS;KARWACKI EUGENE JOSEPH 发明人 LUKAS AARON SCOTT;O'NEILL MARK LEONARD;BITNER MARK DANIEL;VINCENT JEAN LOUISE;VRTIS RAYMOND NICHOLAS;KARWACKI EUGENE JOSEPH
分类号 C23C16/40;H01L21/316;(IPC1-7):C23C16/00;B05D3/06 主分类号 C23C16/40
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