发明名称 |
Memory cell sensing integrator |
摘要 |
The invention includes a memory cell sensor. The memory cell sensor includes an integrator for sensing a logical state of a memory cell. An integrator calibration circuit provides a corrective bias to the integrator, the corrective bias being based upon a difference between an initial integrator output value and a reference value. Another embodiment of the invention includes a method of sensing a logical state of a memory cell. The memory cell being sensed by an integrator. The method includes determining an initial integrator output value when a corrective bias of the integrator is zeroed, generating a correction value by comparing the initial integrator output value to a reference value, and applying the correction value to the corrective bias of the integrator.
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申请公布号 |
US2004095827(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20020299501 |
申请日期 |
2002.11.19 |
申请人 |
PERNER FREDRICK;TRAN LUNG |
发明人 |
PERNER FREDRICK;TRAN LUNG |
分类号 |
G11C7/06;G11C11/16;(IPC1-7):G11C7/02 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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