发明名称 Memory cell sensing integrator
摘要 The invention includes a memory cell sensor. The memory cell sensor includes an integrator for sensing a logical state of a memory cell. An integrator calibration circuit provides a corrective bias to the integrator, the corrective bias being based upon a difference between an initial integrator output value and a reference value. Another embodiment of the invention includes a method of sensing a logical state of a memory cell. The memory cell being sensed by an integrator. The method includes determining an initial integrator output value when a corrective bias of the integrator is zeroed, generating a correction value by comparing the initial integrator output value to a reference value, and applying the correction value to the corrective bias of the integrator.
申请公布号 US2004095827(A1) 申请公布日期 2004.05.20
申请号 US20020299501 申请日期 2002.11.19
申请人 PERNER FREDRICK;TRAN LUNG 发明人 PERNER FREDRICK;TRAN LUNG
分类号 G11C7/06;G11C11/16;(IPC1-7):G11C7/02 主分类号 G11C7/06
代理机构 代理人
主权项
地址