| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the adhesive characteristic with an insulating layer and prevent the generation of defect on the surface of copper by forming a shallow metal layer on a copper layer using a sputtering process. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10). A trench is formed by carrying out a patterning process on the interlayer dielectric. A metal plating layer(18) is formed for partially filling the trench. Then, the trench is completely filled by forming a metal layer(20) on the metal plating layer. A dielectric layer(22) is formed on the entire surface of the resultant structure. Preferably, the metal layer is made of one selected from a group consisting of aluminum, tantalum, and tungsten. Preferably, the metal plating layer is made of copper.
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