| 摘要 |
PROBLEM TO BE SOLVED: To provide a very efficient hetero-junction FET with little deteriorations of properties by high temperature annealing for ion implantation and activation, and whose source/drain region is formed by ion implantation. SOLUTION: For an n-type Al<SB>0.2</SB>Ga<SB>0.8</SB>As layer 105 which will become an n-type carrier supply layer, an Se-doped layer is used instead of an Si-doped layer which has been used in the past. In the annealing process which is inevitable for activating an ion implanted region which will become the source/drain region (107 and 108), F atoms attach to a front surface of an epitaxial substrate in a process during annealing. It has been a problem that, when the F atoms are diffused, a conventional Si donor reacts with the diffused F atoms and thereby is inactivated. By using the Se-doped region instead of the Si-doped region, however, donor inactivation by the reaction between the donor and the F atoms occurs less frequently, and hence FET properties are little deteriorated, resulting in realizing the very efficient hetero-junction FET. COPYRIGHT: (C)2004,JPO
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