| 摘要 |
PROBLEM TO BE SOLVED: To provide a ceramic heater for a semiconductor manufacturing device that is suppressed in the fluctuation of its shape, particularly, its outside diameter in the thickness direction at a normal temperature, and can improve the soaking property of the surface of a wafer in heat-treating the wafer. SOLUTION: This ceramic heater 1 has resistance heating elements 3 on or in ceramic substrates 2a and 2b. When the heater 1 is not heated, the difference between the maximum and minimum outside diameters of the heater in the thickness direction is adjusted to≤0.8% of the average outside diameter of its wafer placing surface. It is also possible to dispose plasma electrodes on or in the ceramic substrates 2a and 2b of this heater 1. It is preferable, in addition, to use at least one kind of material selected from among an aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide for forming the substrates 2a and 2b. COPYRIGHT: (C)2004,JPO
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