发明名称 |
Integrated circuit structure |
摘要 |
An interlayer dielectric multilayer film is formed by providing a boron nitride film as a protective film 34 between interlayer dielectric films 33 with a low relative dielectric constant which comprise organic coated films or porous films. The interlayer dielectric films 34 having a low relative dielectric constant are combined with the boron nitride film excellent in mechanical and chemical resistance, high in thermal conductivity and having a low relative dielectric constant, thereby achieving a low relative dielectric constant, while maintaining adhesion and moisture absorption resistance.
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申请公布号 |
US2004094840(A1) |
申请公布日期 |
2004.05.20 |
申请号 |
US20030472462 |
申请日期 |
2003.09.22 |
申请人 |
SAKAMOTO HITOSHI;UEDA NORIAKI;SUGINO TAKASHI |
发明人 |
SAKAMOTO HITOSHI;UEDA NORIAKI;SUGINO TAKASHI |
分类号 |
C23C16/38;H01L21/31;H01L21/318;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
C23C16/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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