THIN FILM MAKING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a thin film making apparatus which suppresses contamination of discharge surfaces of electrodes.

SOLUTION: The thin film making apparatus is provided with a discharge space arranged to oppose the first electrode and the second electrode, a voltage applying means for iapplying a high-frequency voltage between the first electrode and the second electrode, and a gas introducing means for introducing reactive gas and discharge gas to the discharge space and making film to a substrate surface arranged on the second electrode by applying the voltage to the electrodes from the voltage applying means under the atmospheric pressure or the pressure near the atmospheric pressure thereby activating the reactive gas introduced into the discharge space. The discharge gas contains gaseous nitrogen of 50 to 100vol% and prevents direct contact of the discharge surface of the first electrode with the reactive gas.

COPYRIGHT: (C)2004,JPO